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| Ordering number : ENN7806A 2SK3704 2SK3704 Features * * * * N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Enargy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 60 20 45 180 2.0 30 150 --55 to +150 303 45 Unit V V A A W W C C mJ A *1 VDD=20V, L=200H, IAV=45A *2 L200H, single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS= 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=23A ID=23A, VGS=10V ID=23A, VGS=4V Ratings min 60 1 10 1.2 22 32 10.5 15 14 21 2.6 typ max Unit V A A V S m m Marking : K3704 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1504 TS IM TB-00000498 / 21004QA TS IM TB-00000013 No.7806-1/4 2SK3704 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=45A VDS=30V, VGS=10V, ID=45A VDS=30V, VGS=10V, ID=45A IS=45A, VGS=0 Ratings min typ 3500 500 350 26 175 265 210 67 10.6 10 1.0 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm 2063A 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 14.0 1.6 1.2 0.75 12 3 2.55 2.4 0.7 2.55 2.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML 2.55 2.55 Switching Time Test Circuit VIN 10V 0V VIN ID=23A RL=1.3 VDD=30V Unclamped Inductive Test Circuit L 50 DUT D PW=10s D.C.1% VOUT 10V 0V 50 VDD G 2SK3704 P.G 50 S No.7806-2/4 2SK3704 80 70 60 50 40 30 20 10 0 0 ID -- VDS Tc=25C 10V 8V 80 70 ID -- VGS 25C Tc= --25 C VDS=10V 6V Drain Current, ID -- A Drain Current, ID -- A 4V 60 50 40 30 25 C 10 0 0 C 75 0.5 1.0 1.5 2.0 2.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Tc= -- 3.0 25 C 3.5 VGS=3V 20 75 C 4.0 4.5 IT06615 125 150 IT06617 1.5 IT06619 Drain-to-Source Voltage, VDS -- V 35 IT06614 30 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc ID=23A Static Drain-to-Source On-State Resistance, RDS(on) -- m 30 Static Drain-to-Source On-State Resistance, RDS(on) -- m 25 25 20 20 15 I D= , VG 23A 4V S= 10V S= 15 Tc=75C 25C , VG 23A I D= 10 10 --25C 5 0 0 5 1 2 3 4 5 6 7 8 9 10 0 --50 --25 0 25 50 75 100 Gate-to-Source Voltage, VGS -- V 100 yfs -- ID IT06616 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.3 Case Temperature, Tc -- C IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 7 5 3 2 10 7 5 3 2 1.0 VDS=10V = Tc 75 C Tc=7 5C 25 --2 C 25 5 C Forward Drain Current, IF -- A C 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 1000 7 7 100 IT06618 10000 7 5 5 0.6 --25C 0.9 1.2 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V VDD=30V VGS=10V td(off) Switching Time, SW Time -- ns 5 3 2 Ciss Ciss, Coss, Crss -- pF 3 2 tf 100 7 5 3 2 10 0.1 1000 7 5 3 2 100 tr Coss Crss td(on) 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 0 5 10 15 20 25 30 IT06621 Drain Current, ID -- A IT06620 Drain-to-Source Voltage, VDS -- V No.7806-3/4 2SK3704 10 9 VGS -- Qg VDS=30V ID=45A 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ASO IDP=180A <10s Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 Drain Current, ID -- A ID=45A 10 1m s 10 10 ms 0m DC s op era tio n 10 s 0 s Operation in this area is limited by RDS(on). 0.1 0.1 Tc=25C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Total Gate Charge, Qg -- nC 2.5 IT06622 35 PD -- Ta Allowable Power Dissipation, PD -- W Drain-to-Source Voltage, VDS -- V 5 7 100 IT06623 PD -- Tc Allowable Power Dissipation, PD -- W 30 2.0 25 1.5 20 1.0 15 10 0.5 5 0 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT06624 Case Temperature, Tc -- C IT06625 Note on usage : Since the 2SK3704 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2004. Specifications and information herein are subject to change without notice. PS No.7806-4/4 This datasheet has been download from: www..com Datasheets for electronics components. |
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